Title :
Modeling of high-injection effects in bipolar devices
Author_Institution :
Dept. of Electron. Eng., Naples Univ., Italy
Abstract :
An analytical model for minority-carrier transport and recombination in quasi-neutral regions at arbitrary injection levels is presented. The proposed approach retains a general dependence of the transport parameter on the doping concentration, and can be thus applied to arbitrary doping profiles. It also includes heavy doping effects and injection-dependent recombination mechanisms. Simple closed-form analytical expressions are derived for the minority-carrier currents in bipolar transistors, and for the effective recombination velocity of high-low junctions
Keywords :
bipolar transistors; doping profiles; electron-hole recombination; heavily doped semiconductors; minority carriers; p-n junctions; semiconductor device models; solar cells; analytical model; bipolar device modelling; bipolar transistors; carrier recombination; doping concentration; doping profiles; effective recombination velocity; heavy doping effects; high-injection effects; high-low junctions; injection-dependent recombination mechanisms; minority-carrier currents; minority-carrier transport; quasi-neutral regions; solar cells; Analytical models; Bipolar transistors; Closed-form solution; Doping profiles; Electrons; Equations; Radiative recombination; Semiconductor device doping; Semiconductor process modeling; Spontaneous emission;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500945
