Title :
Limit of D.C. performance of trench power MOSFETs
Author :
Morancho, F. ; Tranduc, H. ; Rossel, P.
Author_Institution :
L.A.A.S., Toulouse, France
Abstract :
In this paper, the limit of performance of low-voltage trench power MOSFETs and VDMOSFETs is studied from the points of view of specific on-resistance and cell density. It is shown that unlike VDMOSFET the trench MOSFET is not limited by the JFET effect. From a theoretical point of view, the 60 V trench MOSFET could have an on-resistance equal to 0.4 mΩ.cm2
Keywords :
field effect transistor switches; power MOSFET; power field effect transistors; power semiconductor switches; semiconductor device models; 60 V; DC performance; VDMOSFET; cell density; specific on-resistance; trench power MOSFET; Electron mobility; Hydrogen; Impedance; MOSFET circuits; Neodymium; Power MOSFET; Power electronics; Surface resistance; Thermal stability; Threshold voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500950
