DocumentCode
169465
Title
Detection sensitivity improvement on STI module in 28nm process foundry logic node
Author
Koronel, Dan ; Soni, Gaurav ; Gupta, V. ; Beyer, Matthias ; Gunther, Tobias ; Billasch, Torsten ; Soonekindt, Christophe ; van Oostrum, Robert ; Kirsch, Remo
Author_Institution
Appl. Mater.- SSG, PDC, Rehovot, Israel
fYear
2014
fDate
19-21 May 2014
Firstpage
274
Lastpage
277
Abstract
In this paper we demonstrate a sensitivity improvement on a Nitride Strip layer at the Shallow Trench Isolation (STI) process module and how this sensitivity was later used to improve yield monitoring. The improvement was enabled due to optics enhancements of a Deep UV (DUV) Bright-Field (BF) inspection tool (UVision™ 5, Applied Materials).
Keywords
crack detection; inspection; integrated circuit yield; isolation technology; process monitoring; ultraviolet lithography; DUV bright-field inspection tool; STI process module; deep UV BFinspection tool; foundry logic node; nitride strip layer; optics enhancements; sensitivity improvement; shallow trench isolation process module; size 28 nm; yield monitoring; Inspection; Logic gates; Monitoring; Reliability; Sensitivity; Signal to noise ratio; Strips; DUV inspection; defect detection; semiconductor wafer; wafer inspection; yield monitoring;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location
Saratoga Springs, NY
Type
conf
DOI
10.1109/ASMC.2014.6847020
Filename
6847020
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