Title :
Detection sensitivity improvement on STI module in 28nm process foundry logic node
Author :
Koronel, Dan ; Soni, Gaurav ; Gupta, V. ; Beyer, Matthias ; Gunther, Tobias ; Billasch, Torsten ; Soonekindt, Christophe ; van Oostrum, Robert ; Kirsch, Remo
Author_Institution :
Appl. Mater.- SSG, PDC, Rehovot, Israel
Abstract :
In this paper we demonstrate a sensitivity improvement on a Nitride Strip layer at the Shallow Trench Isolation (STI) process module and how this sensitivity was later used to improve yield monitoring. The improvement was enabled due to optics enhancements of a Deep UV (DUV) Bright-Field (BF) inspection tool (UVision™ 5, Applied Materials).
Keywords :
crack detection; inspection; integrated circuit yield; isolation technology; process monitoring; ultraviolet lithography; DUV bright-field inspection tool; STI process module; deep UV BFinspection tool; foundry logic node; nitride strip layer; optics enhancements; sensitivity improvement; shallow trench isolation process module; size 28 nm; yield monitoring; Inspection; Logic gates; Monitoring; Reliability; Sensitivity; Signal to noise ratio; Strips; DUV inspection; defect detection; semiconductor wafer; wafer inspection; yield monitoring;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2014.6847020
