Title :
Simulation of transient turn-off characteristics of a trench emitter insulated gate bipolar transistor (IGBT)
Author :
Sabesan, L. ; Mawby, P ; Towers, M.S. ; Board, K. ; Waind, P.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Coll. of Swansea, UK
Abstract :
The modelling of transient turn-off characteristics in an IGBT structure is presented. The semiconductor equations are solved in two dimensions with physical effects such as carrier-carrier scattering mobility and SRH and Auger recombination included. The I-V characteristics, turn-off behaviour and hole concentration have been investigated. Comparison between simulation and measurement shows a good qualitative and quantitative agreement
Keywords :
Auger effect; carrier mobility; characteristics measurement; electron-hole recombination; insulated gate bipolar transistors; semiconductor device models; Auger recombination; I-V characteristics; SRH; carrier-carrier scattering mobility; hole concentration; physical effects; semiconductor equations; transient turn-off characteristics; trench emitter insulated gate bipolar transistor; Charge carrier processes; Circuit simulation; Electron mobility; Insulated gate bipolar transistors; Insulation; Integral equations; Nonlinear equations; Poisson equations; Power semiconductor devices; Radiative recombination;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500951
