Simulation of transient turn-off characteristics of a trench emitter insulated gate bipolar transistor (IGBT)

Author

Sabesan, L. ; Mawby, P ; Towers, M.S. ; Board, K. ; Waind, P.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. Coll. of Swansea, UK

Volume

2

fYear

1995

Firstpage

697

Abstract

The modelling of transient turn-off characteristics in an IGBT structure is presented. The semiconductor equations are solved in two dimensions with physical effects such as carrier-carrier scattering mobility and SRH and Auger recombination included. The I-V characteristics, turn-off behaviour and hole concentration have been investigated. Comparison between simulation and measurement shows a good qualitative and quantitative agreement

Keywords

Auger effect; carrier mobility; characteristics measurement; electron-hole recombination; insulated gate bipolar transistors; semiconductor device models; Auger recombination; I-V characteristics; SRH; carrier-carrier scattering mobility; hole concentration; physical effects; semiconductor equations; transient turn-off characteristics; trench emitter insulated gate bipolar transistor; Charge carrier processes; Circuit simulation; Electron mobility; Insulated gate bipolar transistors; Insulation; Integral equations; Nonlinear equations; Poisson equations; Power semiconductor devices; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1995. Proceedings., 1995 20th International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-2786-1

Type

conf

DOI

10.1109/ICMEL.1995.500951

Filename

500951