DocumentCode :
169474
Title :
Extending dry pump reliability on high-k ALD furnaces
Author :
Nishimura, Kosuke ; Boger, Maiku ; Ito, Kei
Author_Institution :
Edwards Ltd., Yachiyo, Japan
fYear :
2014
fDate :
19-21 May 2014
Firstpage :
306
Lastpage :
309
Abstract :
The industry, today, makes use of high-k dielectric films deposited using ALD. Early introduction of these processes into high volume manufacture identified dry pump reliability to be a key concern. Careful investigation of the exchanged pumps and analysis of the issues allowed for better understanding of the likely failure mechanisms. Changing the pump mechanism from that used in the original pumps resulted in extending the service interval four to six times that originally experienced. More than temperature changes or purge adjustments, a fundamental change to the pump structure yielded the most positive results.
Keywords :
atomic layer deposition; batch processing (industrial); electronic equipment manufacture; high-k dielectric thin films; semiconductor device reliability; semiconductor technology; vacuum pumps; atomic layer deposition; dry pump reliability; high volume manufacture; high-k ALD furnaces; high-k dielectric films; Furnaces; Gases; High K dielectric materials; Liquids; Metals; Powders; Rotors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Type :
conf
DOI :
10.1109/ASMC.2014.6847026
Filename :
6847026
Link To Document :
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