Title :
Surface treatment against bromine defectivity in plasma etch reactor
Author :
Yoann, Goasduff ; Nguyen, Minh-Khai ; Patrice, Laurens ; Distefano, Giuseppe
Author_Institution :
Plasma etch Eng. Group, ST Microelectron., Rousset, France
Abstract :
This paper evaluates two treatment processes to reduce HBr in plasma etch reactor. The bromine concentration is measured by a total X-Ray fluorescence (TXRF) technique. The first treatment is based on an outgassing effect by heating and the second on a plasma etch surface treatment. Both treatments can lead to a reduction by a factor 20 of the bromine concentration. The electrical impact of the plasma needs to be evaluated.
Keywords :
X-ray fluorescence analysis; bromine; hydrogen compounds; outgassing; sputter etching; HBr; TXRF technique; bromine concentration; bromine defectivity; outgassing effect; plasma etch reactor; plasma etch surface treatment; surface treatment processes; total X-ray fluorescence technique; Fluorescence; Inductors; Plasma measurements; Plasmas; Pollution measurement; Resists; Surface treatment; HBr; TXRF; etching; plasma; surface treatment;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2014.6847030
