Author_Institution :
Nat. Tsing-Hua Univ., Hsinchu, Taiwan
Abstract :
Summary form only given. The increasing demands on embedded non-volatile memories in logic circuits spurred many research activities in the development of low-cost, highly scalable and compatible solutions. Besides full compatibility to standard CMOS logic process, low voltage and power operations, small cell size, and fast programming and accessing speed are all desirable features in logic NVMs. As technology scales, conventional solutions suffer from high power, performance degradation and poor scalability. In this talk, new logic NVM cells developed for advance logic circuit are introduced and compared to provide new design directions for the future.
Keywords :
CMOS logic circuits; low-power electronics; nanoelectronics; random-access storage; scaling circuits; CMOS logic process; embedded nonvolatile memory; logic NVM; low-power operation; nanoscale technology;
Conference_Titel :
Memory Technology, Design, and Testing, 2009. MTDT '09. IEEE International Workshop on
Conference_Location :
Hsinchu
Print_ISBN :
978-0-7695-3797-9
DOI :
10.1109/MTDT.2009.27
