A 55 kW three-phase inverter with Si IGBTs and SiC Schottky diodes

Author

Ozpineci, Burak ; Chinthavali, Madhu S. ; Tolbert, Leon M. ; Kashyap, Avinash ; Mantooth, H. Alan

Author_Institution

Oak Ridge Nat. Lab., TN, USA

fYear

2006

Abstract

Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Presently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si IGBT-SiC Schottky diode hybrid 55kW inverter by replacing the Si pn diodes in Semikron´s automotive inverter with Cree´s made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results to those of a similar all-Si inverter.

Keywords

Schottky diodes; automotive electronics; insulated gate bipolar transistors; invertors; power semiconductor devices; silicon compounds; wide band gap semiconductors; 55 kW; Schottky diodes; SiC; automotive inverter; insulated gate bipolar transistor; silicon carbide power devices; three-phase inverter; Automotive engineering; Collaboration; Government; Insulated gate bipolar transistors; Inverters; Laboratories; Schottky diodes; Silicon carbide; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE

Print_ISBN

0-7803-9547-6

Type

conf

DOI

10.1109/APEC.2006.1620576

Filename

1620576