Title :
Millimeter-wave band-pass filter using active matching principles
Author :
Mouzannar, W. ; Ezzedine, H. ; Billonnet, L. ; Jarry, B. ; Guillon, P.
Author_Institution :
IRCOM, Limoges Univ., France
fDate :
6/21/1905 12:00:00 AM
Abstract :
A MMIC band-pass active filter at Ka-band using active matching devices have been successfully implemented employing 0.2 μm-GaAs P-HEMT technology. A 5% measured relative bandwidth at millimeter frequencies have been achieved and validates the accuracy of the design methodology. In this contribution measured results have been reported with prime attention to low noise figure and power performance as it is necessary at the input of a receiver
Keywords :
HEMT integrated circuits; III-V semiconductors; active filters; band-pass filters; field effect MMIC; gallium arsenide; millimetre wave filters; 0.2 micron; GaAs; GaAs P-HEMT technology; Ka-band; MMIC band-pass active filter; active matching; millimeter-wave band-pass filter; Active filters; Band pass filters; Bandwidth; Design methodology; Frequency measurement; MMICs; Millimeter wave devices; Millimeter wave measurements; Millimeter wave technology; Power measurement;
Conference_Titel :
High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0270-9
DOI :
10.1109/MIAME.1999.827800
