Design and analysis of large signal microwave power amplifiers

Author

Mokari-Bolhassan, M.E. ; Wong, Wai K.

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio Univ., Athens, OH, USA

fYear

1989

Firstpage

2231

Abstract

A procedure for the design of broadband large-signal amplifiers is presented. The method is based on extraction of bias-dependent small-signal S-parameters from the nonlinear device model. A broadband matching technique is used to obtain flat power gain at the band of interest while suppressing unwanted harmonics. The procedure has been used to design octave-band GaAs FET amplifiers. Simulation results using the harmonic balance technique verify the effectiveness of the procedure

Keywords

S-parameters; microwave amplifiers; nonlinear network analysis; nonlinear network synthesis; power amplifiers; solid-state microwave circuits; FET amplifiers; GaAs; broadband matching technique; flat power gain; harmonic balance technique; large-signal amplifiers; microwave power amplifiers; nonlinear device model; octave-band; small-signal S-parameters; Bandwidth; Broadband amplifiers; Circuit simulation; Circuit synthesis; Microwave amplifiers; Power amplifiers; Process design; Scattering parameters; Signal analysis; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1989., IEEE International Symposium on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/ISCAS.1989.100821

Filename

100821

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1696217