Title :
Low-Leakage micro gate valves
Author :
Frank, J.A. ; Pisano, A.P.
Author_Institution :
Dept. of Mech. Eng., Univ. of California, Berkeley, CA, USA
Abstract :
We have developed a device design and fabrication process for low-leakage, planar silicon gate valves. The "hole-in-the-wall" fabrication process has been used to create manually actuated gate valves that exhibit fluidic-resistance ratios greater than 27,000:1. Furthermore, theory shows that this ratio may be increased further by a factor of five because the current valve seat has not been optimized. The fabrication process makes possible, for the very first time, planar micro valves with valve seats that completely encompass the fluid flow. As opposed to previously published planar micro valves, there is no direct leakage path around the valve gate because this new fabrication approach places a flow orifice in the center of the wall of a channel. With the channel walls used as a valve seat, the location of this orifice reduces the leakage above and below the gate, a problem inherent in all planar micro-fluidic valves. Our robust, wafer-level, three-mask, self-aligned process is described and includes important details regarding smoothing of the valve-seat surface.
Keywords :
elemental semiconductors; microfluidics; microvalves; semiconductor device models; semiconductor devices; silicon; Si; channel walls; device design; device fabrication; fluid flow; fluidic-resistance ratios; low-leakage micro gate valves; planar microfluidic valves; planar silicon gate valves; self-aligned process; valve-seat surface; wafer-level; Actuators; Etching; Fabrication; Fluid flow control; Fluidics; Mechanical engineering; Microvalves; Orifices; Silicon; Valves;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215273