Title :
The effect of thermal annealing on the properties of polysilicon piezoresistors
Author :
Gridchin, V.A. ; Grischenko, V.V. ; Lubimsky, V.M.
fDate :
6/21/1905 12:00:00 AM
Abstract :
Polycrystalline silicon offers promise as a pressure sensor material, especially for extended temperature range applications. The investigation of the dependencies of polysilicon layers´ physical properties on deposition and annealing parameters is the aim of this work
Keywords :
annealing; carrier density; carrier mobility; chemical vapour deposition; elemental semiconductors; piezoresistive devices; resistors; semiconductor growth; silicon; LPCVD; Si; deposition; physical properties; polycrystalline silicon; polysilicon piezoresistors; pressure sensor material; thermal annealing; Annealing; Argon; Conductivity; Doping; Ion implantation; Piezoresistive devices; Silicon; Stability; Temperature dependence; Virtual reality;
Conference_Titel :
High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0270-9
DOI :
10.1109/MIAME.1999.827838
