Design features for high pressure transducers

Author

Gridchin, V.A. ; Grischenko, V.V. ; Lubimsky, V.M. ; Shaporin, AV ; Lee, J.H.

Author_Institution

Novosibirsk State Tech. Univ., Russia

fYear

1999

fDate

6/21/1905 12:00:00 AM

Abstract

In this experimental work the polysilicon pressure transducers are designed with pressure-sensitive elements and made for pressures over 5 MPa. To determine the magnitude of mechanical stress in the diaphragm, we defined gauge factors from longitudinal and transverse piezoresistors on the console beam made from the same wafer as the diaphragm. Also, we made a model for mechanical stress in the diaphragm by the finite element method (FEM) by taking into account not only the uniformly distributed load on the plate of the diaphragm, but also the load on the lateral side of the diaphragm. The comparison of the calculated mechanical stress with the experimentally defined one has shown a coincidence within 20% error bound

Keywords

diaphragms; finite element analysis; piezoresistive devices; pressure transducers; semiconductor device models; silicon; 5 GPa; FEM; Si; console beam; design features; diaphragm; finite element method; gauge factors; high pressure transducers; lateral side; mechanical stress; modeling; piezoresistors; polysilicon; pressure-sensitive elements; uniformly distributed load; Etching; Mechanical sensors; Oxidation; Piezoresistance; Piezoresistive devices; Resistors; Strain measurement; Stress; Structural beams; Transducers;

fLanguage

English

Publisher

ieee

Conference_Titel

High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference

Conference_Location

Novosibirsk

Print_ISBN

5-7782-0270-9

Type

conf

DOI

10.1109/MIAME.1999.827843

Filename

827843