Title :
The simulation of charge transport phenomena in heterostructures
Author_Institution :
Novosibirsk State Tech. Univ.
fDate :
6/21/1905 12:00:00 AM
Abstract :
A program for modeling structures containing sharp and smooth heterojunctions is created. The account in the program is conducted in view of Fermi-Dirac statistics. Diffusion and carrier charge drift are taken into account. With the help of this program the HEMT structure was simulated and the I-V characteristics of this structure were designed
Keywords :
Schrodinger equation; carrier lifetime; high electron mobility transistors; semiconductor device models; semiconductor heterojunctions; Fermi-Dirac statistics; HEMT structure; I-V characteristics; carrier charge drift; charge transport; heterostructures; Conductivity; HEMTs; Heterojunctions; Poisson equations; Potential well; Quantization; Schrodinger equation; Semiconductor process modeling; Student members; Wave functions;
Conference_Titel :
High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0270-9
DOI :
10.1109/MIAME.1999.827845
