DocumentCode
1696557
Title
The simulation of charge transport phenomena in heterostructures
Author
Makarov, E.A.
Author_Institution
Novosibirsk State Tech. Univ.
fYear
1999
fDate
6/21/1905 12:00:00 AM
Abstract
A program for modeling structures containing sharp and smooth heterojunctions is created. The account in the program is conducted in view of Fermi-Dirac statistics. Diffusion and carrier charge drift are taken into account. With the help of this program the HEMT structure was simulated and the I-V characteristics of this structure were designed
Keywords
Schrodinger equation; carrier lifetime; high electron mobility transistors; semiconductor device models; semiconductor heterojunctions; Fermi-Dirac statistics; HEMT structure; I-V characteristics; carrier charge drift; charge transport; heterostructures; Conductivity; HEMTs; Heterojunctions; Poisson equations; Potential well; Quantization; Schrodinger equation; Semiconductor process modeling; Student members; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference
Conference_Location
Novosibirsk
Print_ISBN
5-7782-0270-9
Type
conf
DOI
10.1109/MIAME.1999.827845
Filename
827845
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