Title :
A PCM translation layer for integrated memory and storage management
Author :
Bing-Jing Chang ; Yuan-Hao Chang ; Hung-Sheng Chang ; Tei-Wei Kuo ; Hsiang-Pang Li
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Nat. Taiwan Univ. Taipei, Taipei, Taiwan
Abstract :
Phase change memory (PCM) is known for its potentials as main memory and as storage. In contrast to the past work, this work presents a PCM translation layer that considers how the main memory is used by the operating system together with the usage patterns of storage by trading their performance and reliability. In particular, a joint management scheme is proposed to improve the capability of PCM as both main memory and storage so as to enhance the performance of the entire system. The endurance issue of PCM for main memory is resolved by utilizing the potentially large capacity of the PCM storage space with limited modifications to the existing operating system implementations. Moreover, three commands are proposed to help operating system engineers to take advantage of PCM as main memory and storage by reducing I/O overheads and speeding up both the initialization and termination of program executions. The experimental results show that the performance of PCM as both main memory and storage can be significantly improved with reasonable lifetime, while the system overhead is very limited under coarse-grained wear leveling.
Keywords :
operating systems (computers); phase change memories; program verification; storage management; I/O overheads; PCM storage space; PCM translation layer; coarse-grained wear leveling; integrated memory management; integrated storage management; joint management scheme; operating system; operating system implementations; phase change memory; program executions; Hardware; Joints; Memory management; Operating systems; Performance evaluation; Phase change materials; Random access memory;
Conference_Titel :
Hardware/Software Codesign and System Synthesis (CODES+ISSS), 2014 International Conference on
Conference_Location :
New Delhi
DOI :
10.1145/2656075.2656078