DocumentCode
1696875
Title
Characterization of Traveling Wave Multiplier
Author
Ghalamkari, Behbod ; Mohammadi, Abbas ; Abdipour, Abdolali
Author_Institution
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran
fYear
2008
Firstpage
584
Lastpage
588
Abstract
Analysis of MESFET traveling wave multipliers (TWM) has been presented. Moreover, a systematic approach to its design has been presented. The analysis has revealed that the transmission-line attenuation and gate phase factor are the critical factors in the design of the TWM. In order to confirm these approaches two doublers were designed from 7 to 17 GHz, and the results are presented.
Keywords
Schottky gate field effect transistors; frequency multipliers; transmission lines; MESFET; frequency 7 GHz to 17 GHz; gate phase factor; transmission-line attenuation; traveling wave multiplier; Attenuation; Capacitance; Costs; Distributed amplifiers; FETs; Frequency; MESFETs; Signal design; Transmission line theory; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems for Communications, 2008. ICCSC 2008. 4th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1707-0
Electronic_ISBN
978-1-4244-1708-7
Type
conf
DOI
10.1109/ICCSC.2008.130
Filename
4536822
Link To Document