Title :
A 3-V RF CMOS bandpass amplifier using an active inductor
Author :
Thanachayanont, Apinunt ; Payne, Alison
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
This paper presents the design of a 3-V RF CMOS bandpass amplifier using the recently proposed CMOS active inductor. Negative feedback is used with a cascode amplifier to realise a grounded inductance as a frequency selective element and achieve power amplification simultaneously. The proposed bandpass amplifier, which includes an input matching network and an output voltage buffer for a 50-Ω environment, is designed and simulated with a commercial 0.8-μm n-well BiCMOS process using HSPICE. Simulation results of the bandpass amplifier tuned at a centre frequency of 1 GHz with a quality factor of 56 illustrate that a power gain of 23 dB, and a noise figure of 4.3 dB can be achieved with a power dissipation of 57 mW from a single 3 V supply
Keywords :
CMOS analogue integrated circuits; Q-factor; SPICE; UHF amplifiers; UHF integrated circuits; circuit analysis computing; digital simulation; feedback amplifiers; inductors; power amplifiers; 0.8 micron; 1 GHz; 23 dB; 3 V; 4.3 dB; 50 ohm; 57 mW; CMOS; HSPICE; RF bandpass amplifier; active inductor; cascode amplifier; centre frequency; frequency selective element; input matching network; negative feedback; output voltage buffer; power amplification; power dissipation; power gain; quality factor; rounded inductance; Active inductors; BiCMOS integrated circuits; Impedance matching; Inductance; Negative feedback; Power amplifiers; Q factor; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.704471
