Title :
16-level Current-Mode Multiple-Valued Dynamic Memory with Increased Noise Margin
Author :
Khodabndehloo, Golnar ; Mirhassani, Mitra ; Ahmadi, Majid
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Windsor, Windsor, ON
Abstract :
Design and implementation of a novel 16-level multiple-valued memory is proposed. Each memory cell uses equivalent to one binary digit to detect the error due to leakage currents. Moreover, this feature increases the noise margin of the system by a factor of two. The refreshing circuitry is based on a series configuration of A/D and D/A converters for each data line. The error correction and storage scheme is based on a recently developed multiple-valued representation, called Continuous Valued Number System (CVNS). This memory cell can be used in hardware implementation of multiple-valued neural networks based on the CVNS.
Keywords :
DRAM chips; current-mode circuits; current-mode logic; multivalued logic; multivalued logic circuits; A/D converters; Continuous Valued Number System; D/A converters; binary digit; current-mode multiple-valued dynamic memory; leakage current; multiple-valued neural networks; multiple-valued representation; noise margin; refreshing circuitry; Arithmetic; Capacitors; Circuits; Leak detection; Leakage current; Logic; Neural networks; Random access memory; Redundancy; Voltage; CVNS; error correction; memory; multiple-valued; noise margin;
Conference_Titel :
Multiple-Valued Logic, 2009. ISMVL '09. 39th International Symposium on
Conference_Location :
Naha, Okinawa
Print_ISBN :
978-1-4244-3841-9
Electronic_ISBN :
0195-623X
DOI :
10.1109/ISMVL.2009.12
