DocumentCode :
1698019
Title :
Understanding modulus trends in ultra low K dielectric materials through the use of molecular modeling
Author :
Iwamoto, N. ; Moro, L. ; Bedwell, B. ; Apen, P.
Author_Institution :
StaR Center, Honeywell Electron. Mater., Sunnyvale, CA, USA
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
1318
Lastpage :
1322
Abstract :
Molecular modeling has previously been used to study adhesion and surface energy effects of die attach, underfill and viafill formulations, and is currently being used to study the mechanical property trends of the new class of ultra low k nanoporous dielectric materials, NANOGLASS® porous spin-on-glass (SOG) and GX3-PTM porous organic, being developed within Honeywell. The need to understand material performance from a molecular level is especially understandable when considering the target application in IC fabrication. With such small microstructures, the impact of the molecular mechanical properties imparted by the molecular structure and architecture become more and more important. In addition, we are finding that by understanding the effects of the formulation on the mechanical properties from the molecular level, formulation changes can be planned directly targeted at specific properties. Although we are using many aspects of molecular modeling to help us understand SOG and organic dielectric properties such as density, wetting, solubility and adhesion, for this paper we have concentrated on reporting our observations on modulus. Our studies have found that we can correlate the experimental modulus of these materials very simply with a molecularly derived modulus.
Keywords :
dielectric thin films; elastic moduli; finite element analysis; glass; integrated circuit technology; modelling; organic compounds; permittivity; porous materials; 2D finite element technique; GX3-P porous organic; Honeywell; IC fabrication application; NANOGLASS SOG; modulus; molecular mechanical properties; molecular modeling; porous spinon-glass; ultra low k dielectric materials; Adhesives; Dielectric constant; Dielectric materials; Dry etching; Fabrication; Mechanical factors; Microstructure; Nanoporous materials; Organic materials; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2002. Proceedings. 52nd
ISSN :
0569-5503
Print_ISBN :
0-7803-7430-4
Type :
conf
DOI :
10.1109/ECTC.2002.1008276
Filename :
1008276
Link To Document :
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