DocumentCode :
1698203
Title :
A comparative study of MOS VCOs for low voltage high performance operation
Author :
Zhan, J.H.C. ; Duster, J.S. ; Kornegay, K.T.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
fYear :
2004
Firstpage :
244
Lastpage :
247
Abstract :
Six 10GHz MOS VCOs were designed and fabricated in the IBM 6RF 0.25um CMOS process. Their oscillation frequency, output amplitude and phase noise performance are measured and compared, and the results confirm that replacing shielded-ground inductors with high-resistivity substrate inductors improves phase noise performance. Capacitive source degeneration has also been identified as a performance limiting mechanism in MOS based VCOs rather than performance enhancing as in BJT based VCOs.
Keywords :
CMOS analogue integrated circuits; MMIC oscillators; inductors; integrated circuit noise; low-power electronics; network topology; phase noise; voltage-controlled oscillators; 10 GHz; CMOS VCO; capacitive source degeneration; cross-coupled pair; high-resistivity substrate inductors; low voltage high performance operation; oscillation frequency; output amplitude; phase noise; CMOS process; Circuit topology; Frequency measurement; Inductors; Low voltage; MOS devices; Noise measurement; Phase measurement; Phase noise; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
1-58113-929-2
Type :
conf
DOI :
10.1109/LPE.2004.1349344
Filename :
1349344
Link To Document :
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