Title :
A method for measuring the fracture toughness of micrometer-sized single crystal silicon by tensile test
Author :
Li, K. ; Kasai, T. ; Nakao, S. ; Tanaka, H. ; Ando, T. ; Shikida, M. ; Sato, K.
Author_Institution :
Dept. of Micro system Eng., Nagoya Univ., Japan
Abstract :
We developed a method of measuring the fracture toughness,-which is a material constant in the macroscopic domain, of single crystal silicon on a micrometer-scale. We notched the thin film specimen on a single edge and then conducted uniaxial tensile test to failure. The average value of measured fracture toughness of specimens on the (100) plane was 1.58 MPa/spl middot/m/sup 1/2/ with scatter. This is slightly higher than, but comparable to, the value for bulk silicon. Scanning electron microscope (SEM) observation of the failed specimens revealed that the fracture developed mainly along the [110] cleavage plane.
Keywords :
elemental semiconductors; fracture; fracture toughness; fracture toughness testing; scanning electron microscopy; semiconductor thin films; silicon; tensile testing; SEM; Si; cleavage plane; fracture toughness; material constant; micrometer-sized single crystal silicon; scanning electron microscopy; tensile test; thin film; Bars; Crystalline materials; Materials testing; Mechanical factors; Micromechanical devices; Scanning electron microscopy; Semiconductor device measurement; Silicon; System testing; Tensile stress;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215349
