A method for measuring the fracture toughness of micrometer-sized single crystal silicon by tensile test

Author

Li, K. ; Kasai, T. ; Nakao, S. ; Tanaka, H. ; Ando, T. ; Shikida, M. ; Sato, K.

Author_Institution

Dept. of Micro system Eng., Nagoya Univ., Japan

Volume

1

fYear

2003

Firstpage

444

Abstract

We developed a method of measuring the fracture toughness,-which is a material constant in the macroscopic domain, of single crystal silicon on a micrometer-scale. We notched the thin film specimen on a single edge and then conducted uniaxial tensile test to failure. The average value of measured fracture toughness of specimens on the (100) plane was 1.58 MPa/spl middot/m/sup 1/2/ with scatter. This is slightly higher than, but comparable to, the value for bulk silicon. Scanning electron microscope (SEM) observation of the failed specimens revealed that the fracture developed mainly along the [110] cleavage plane.

Keywords

elemental semiconductors; fracture; fracture toughness; fracture toughness testing; scanning electron microscopy; semiconductor thin films; silicon; tensile testing; SEM; Si; cleavage plane; fracture toughness; material constant; micrometer-sized single crystal silicon; scanning electron microscopy; tensile test; thin film; Bars; Crystalline materials; Materials testing; Mechanical factors; Micromechanical devices; Scanning electron microscopy; Semiconductor device measurement; Silicon; System testing; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7731-1

Type

conf

DOI

10.1109/SENSOR.2003.1215349

Filename

1215349