• DocumentCode
    1699017
  • Title

    Multi-path Switching Device Utilizing a Multi-terminal Nanowire Junction for MDD-Based Logic Circuit

  • Author

    Kasai, Seiya ; Shiratori, Yuta ; Miura, Kensuke ; Wu, Nan-Jian

  • Author_Institution
    Grad. Sch. of Sci. & Technol., Hokkaido Univ., Sapporo
  • fYear
    2009
  • Firstpage
    331
  • Lastpage
    336
  • Abstract
    Simple and compact multi-path switching devices for multi-valued decision diagram (MDD)-based logic circuits are designed, fabricated and characterized. The devices switch multiple exit branches for electrons entering from an entry branch, according to multi-valued input. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages. The gate threshold voltage is controlled by precise design of gate structures and sizes in nanometer scale. The operation principle of the device is described using a simple analytical model. Ternary-path switching devices are demonstrated using AlGaAs/GaAs etched nanowire junctions together with nanometer-scale Schottky wrap gates (WPGs) and in-plane gates (IPGs).
  • Keywords
    aluminium compounds; gallium arsenide; multivalued logic circuits; nanotechnology; nanowires; AlGaAs-GaAs; inplane gate; logic circuits; multipath switching device; multiterminal nanowire junction; multivalued decision diagram; nanometer scale Schottky wrap gates; ternary path switching device; Analytical models; Electrons; Gallium arsenide; Logic circuits; Nanoscale devices; Size control; Switches; Switching circuits; Threshold voltage; Voltage control; GaAs; multi-path switching device; multi-valued decision diagram; nanowire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multiple-Valued Logic, 2009. ISMVL '09. 39th International Symposium on
  • Conference_Location
    Naha, Okinawa
  • ISSN
    0195-623X
  • Print_ISBN
    978-1-4244-3841-9
  • Electronic_ISBN
    0195-623X
  • Type

    conf

  • DOI
    10.1109/ISMVL.2009.43
  • Filename
    5010421