Title :
Novel low temperature BaTiO3 film capacitors
Author :
Law, T.W. ; Liu, C.K. ; Cheng, P.L. ; Chong, I.T. ; Lam, David C C
Author_Institution :
Dept. of Mech. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fDate :
6/24/1905 12:00:00 AM
Abstract :
For embedded capacitor application, only dielectric materials with low processing temperature can be applied to printed wiring board manufacturing. Low temperature processable polymer/ceramic composites have been investigated to meet this need. The dielectric constant is a function of matrix and filler dielectric behavior, and the dielectric constant of highly filled composites is theoretically limited by the low dielectric value of the polymer matrix. In this investigation, we have developed a new amorphous low temperature processable matrix for use in dielectric composites. The new matrix processed at 300°C was characterized to have a dielectric constant of 30. At a deposited thickness of 0.5 μm, the capacitance density of the pure matrix film can reach 1500pF/mm2 before addition of high dielectric constant filler.
Keywords :
barium compounds; capacitance; ceramic capacitors; differential thermal analysis; particle reinforced composites; permittivity; printed circuit manufacture; sol-gel processing; 0.5 micron; 300 C; BaTiO3; TGA/DTA tests; amorphous low temperature processable matrix; amorphous sol-gel BaTiO3; capacitance density; dielectric constant; dielectric materials; embedded capacitor application; ferronic amorphous dielectric material; filler dielectric behavior; high dielectric constant filler; highly filled composite; low processing temperature; low temperature BaTiO3 film capacitors; low temperature processable polymer/ceramic composites; matrix dielectric behavior; printed wiring board manufacturing; Amorphous materials; Capacitors; Ceramics; Dielectric constant; Dielectric materials; High-K gate dielectrics; Manufacturing processes; Polymers; Temperature; Wiring;
Conference_Titel :
Electronic Components and Technology Conference, 2002. Proceedings. 52nd
Print_ISBN :
0-7803-7430-4
DOI :
10.1109/ECTC.2002.1008340
