Title :
SoC architectures for signal processing
Author :
Chau-Ching Chiong ; Wei-Je Tzeng ; Yuh-Jing Hwang ; Wei-Ting Wong ; Huei Wang ; Ming-Tang Chen
Author_Institution :
Inst. of Astron. & Astrophys., Acad. Sinica, Taipei, Taiwan
Abstract :
Design and cryogenic operation of an intermediate frequency (IF) low noise amplifier using a 0.15-mum InGaAs mHEMT process for Atacama large millimeter/submillimeter array (ALMA) is presented in this paper. The amplifier covers 4-12 GHz with small signal gain of 27plusmn2 dB and effective noise temperature of 18-25 K when operating at 20 K. Different bias points are explored to investigate the potential of mHEMT amplifier operating with low dc power consumption. In this case, the amplifier can deliver 20plusmn1 dB gain with effective noise temperature of 30 K at 4-8 GHz with 4.6 mW power consumption.
Keywords :
III-V semiconductors; cryogenic electronics; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; microwave amplifiers; millimetre wave transistors; radio receivers; submillimetre wave transistors; wide band gap semiconductors; InGaAs; cryogenic mHEMT IF low noise amplifier; effective noise temperature; frequency 4 GHz to 12 GHz; intermediate frequency low noise amplifier; low dc power consumption; power 4.6 mW; radio astronomical receivers; size 0.15 mum; temperature 18 K to 25 K; temperature 30 K; Array signal processing; Cryogenics; Energy consumption; Frequency; Gain; Low-noise amplifiers; Process design; Signal processing; Temperature; mHEMTs;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280746
