• DocumentCode
    1699800
  • Title

    New thermally enhanced packages for power MOSFETs in battery pack applications

  • Author

    Bulut, Yalcin

  • Author_Institution
    Vishay Siliconix Inc., Santa Clara, CA, USA
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    1762
  • Lastpage
    1764
  • Abstract
    Recent advances in silicon technology have enabled smaller, higher-efficiency devices by increasing the transistor cell density on the silicon level to 178 million cells per square inch. These silicon capabilities represent a major advance over the devices available just a few years ago, and it is important that advances in packaging technology keep pace. Because of the demanding power and size requirements of next-generation portable devices, new compact packages with superior current-handling capabilities will be increasingly important. In this article, a new thermally enhanced package technology from Vishay Siliconix will be introduced for use in cellular phone 1-2 cell Li+ battery-protection circuits. With the die attach copper pad soldered directly to the printed circuit board, this new packaging technique provides a direct, low-resistance thermal path to the substrate on which the device is mounted. Characteristics of thermally enhanced 1212-8 package will be compared to that of the industry standard TSSOP-8 package through review of the MOSFET packaging trends used in today´s battery pack protection circuits.
  • Keywords
    microassembling; power MOSFET; semiconductor device packaging; thermal management (packaging); thermal resistance; Vishay Siliconix; battery-protection circuits; cellular phone; current-handling capabilities; die attach copper pad; higher-efficiency devices; low-resistance thermal path; next-generation portable devices; packaging technique; power MOSFETs; size requirements; thermally enhanced 1212-8 package; thermally enhanced packages; transistor cell density; Batteries; Cellular phones; Copper; MOSFETs; Microassembly; Packaging; Printed circuits; Protection; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2002. Proceedings. 52nd
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-7430-4
  • Type

    conf

  • DOI
    10.1109/ECTC.2002.1008350
  • Filename
    1008350