DocumentCode :
1700271
Title :
A new output buffer for 3.3-V PCI-X application in a 0.13-μm 1/2.5-V CMOS process
Author :
Chen, Shih-Lun ; Ker, Ming-Dou
Author_Institution :
Nanoelectronics & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2004
Firstpage :
112
Lastpage :
115
Abstract :
An output buffer with low-voltage devices to driver high-voltage signals for PCI-X applications is proposed in this paper. Because PCI-X is a 3.3-V interface, the high-voltage gate-oxide stress is a serious problem to design PCI-X I/O circuits in a 0.13-μm 1/2.5-V CMOS process. The simulation results show that the proposed output buffer can be operated at 133 MHz without causing high-voltage gate-oxide stress problem in the 3.3-V PCI-X interface. Besides, a level converter with only I-V and 2.5-V devices that can converter 0/1-V voltage swing to 1/3.3-V voltage swing is also proposed in this paper. The testchip to verify this new proposed output buffer is now under fabrication. The measured results will be shown in the presentation.
Keywords :
CMOS integrated circuits; buffer circuits; low-power electronics; peripheral interfaces; 3.3 V; CMOS process; PCI-X applications; buffer simulation; driver high-voltage signals; high-voltage gate-oxide stress; level converter; low-voltage devices; output buffer; CMOS process; Circuit simulation; Driver circuits; Laboratories; MOSFETs; Nanoscale devices; Signal processing; Stress; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-8637-X
Type :
conf
DOI :
10.1109/APASIC.2004.1349422
Filename :
1349422
Link To Document :
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