Title :
Proton radiation damage in p-channel CCDs fabricated on high- resistivity silicon
Author :
Bebek, C. ; Groom, D. ; Holland, S. ; Karcher, A. ; Kolbe, W. ; Lee, J. ; Levi, M. ; Palaio, N. ; Turko, B. ; Uslenghi, M. ; Wagner, M. ; Wang, G.
Author_Institution :
E. O. Lawrence Berkeley Nat. Lab., CA, USA
Abstract :
P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1×1011 protons/cm2 at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.
Keywords :
CCD image sensors; cosmic ray apparatus; proton effects; silicon radiation detectors; P-channel backside illuminated silicon CCDs; Si; charge transfer efficiency; dark current; high resistivity silicon; long duration space missions; n-channel devices; radiation dose; Charge coupled devices; Charge transfer; Conductivity; Dark current; Degradation; Implants; Laboratories; Manufacturing; Protons; Silicon;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
Print_ISBN :
0-7803-7324-3
DOI :
10.1109/NSSMIC.2001.1008412
