Diamond micro-Schottky emitter with an integrated heating element

Author

Joon Hyung Bae ; Phan Ngoe Minh ; Ono, T. ; Esashi, M.

Author_Institution

Dept. of Mechatronics & Precision Eng., Tohoku Univ., Sendai, Japan

Volume

1

fYear

2003

Firstpage

778

Abstract

This paper describes the fabrication and evaluation of a boron-doped diamond micro Schottky emitter for micro-electron sources. We fabricated an emitter tip on the top of the cantilever-type heating element using selective diamond deposition and silicon molding techniques. The fabricated diamond emitter shows high brightness emission pattern of an emitting current of 800 nA with tip-anode (screen) electric field of 0.4 V//spl mu/m and tip heating power of 225 mW. This kind of structure can be useful for electron sources with potential advantages of low threshold voltage and long life time stability.

Keywords

Schottky barriers; boron; diamond; electron field emission; elemental semiconductors; heating elements; moulding; photolithography; 225 mW; 800 nA; C:B; boron doped diamond micro Schottky emitter; diamond deposition; diamond microSchottky emitter; integrated heating element; life time stability; microelectron sources; silicon molding; Brightness; Carbon nanotubes; Electron beams; Electron emission; Fabrication; Heating; Lithography; Scanning electron microscopy; Silicon; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7731-1

Type

conf

DOI

10.1109/SENSOR.2003.1215589

Filename

1215589