Title :
Diamond micro-Schottky emitter with an integrated heating element
Author :
Joon Hyung Bae ; Phan Ngoe Minh ; Ono, T. ; Esashi, M.
Author_Institution :
Dept. of Mechatronics & Precision Eng., Tohoku Univ., Sendai, Japan
Abstract :
This paper describes the fabrication and evaluation of a boron-doped diamond micro Schottky emitter for micro-electron sources. We fabricated an emitter tip on the top of the cantilever-type heating element using selective diamond deposition and silicon molding techniques. The fabricated diamond emitter shows high brightness emission pattern of an emitting current of 800 nA with tip-anode (screen) electric field of 0.4 V//spl mu/m and tip heating power of 225 mW. This kind of structure can be useful for electron sources with potential advantages of low threshold voltage and long life time stability.
Keywords :
Schottky barriers; boron; diamond; electron field emission; elemental semiconductors; heating elements; moulding; photolithography; 225 mW; 800 nA; C:B; boron doped diamond micro Schottky emitter; diamond deposition; diamond microSchottky emitter; integrated heating element; life time stability; microelectron sources; silicon molding; Brightness; Carbon nanotubes; Electron beams; Electron emission; Fabrication; Heating; Lithography; Scanning electron microscopy; Silicon; Stability;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215589
