Radiation hardness study of an APS CMOS particle tracker

Author

Dulinski, Wojciech ; Deptuch, Grzegorz ; Gornushkin, Yuri ; Jalocha, Pawel ; Riester, Jean-Louis ; Winter, Marc

Author_Institution

LEPSI, Strasbourg, France

Volume

1

fYear

2001

Firstpage

100

Abstract

The adequacy of Monolithic Active Pixel Sensors for charged particle tracking has been assessed, based on prototypes fabricated in 0.6, 0.35 and 0.25 μm CMOS processes. First radiation hardness studies of these prototypes are presented. Measurements were performed using a 30 MeV/c proton beam, a fast neutron beam from a nuclear reactor and a 10 keV X-ray generator as irradiation sources. The losses in the collected charge were measured after 5×10¹¹ protons/cm² as well as after a total fluence of 10¹² neutrons/cm². Moderate doses (hundreds of kRads) of X-ray photons induces an important increase of a leakage current, showing also limited effect on the collected charge. Test results are reviewed and new charge collecting radiation tolerant structures are proposed.

Keywords

CMOS integrated circuits; X-ray effects; neutron effects; nuclear electronics; position sensitive particle detectors; proton effects; radiation hardening (electronics); readout electronics; semiconductor counters; 0.25 micron; 0.35 micron; 0.6 micron; 10 keV; 30 MeV; APS CMOS particle tracker; X-ray generator; charged particle tracking; collected charge loss; fast neutron beam; leakage current; moderate dose; monolithic active pixel sensors; proton beam; radiation hardness; radiation tolerant structures; CMOS process; Charge measurement; Current measurement; Loss measurement; Nuclear measurements; Nuclear power generation; Particle beams; Particle tracking; Performance evaluation; Prototypes;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2001 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-7324-3

Type

conf

DOI

10.1109/NSSMIC.2001.1008419

Filename

1008419