Title :
SOI-based HF and VHF single-crystal silicon resonators with SUB-100 nanometer vertical capacitive gaps
Author :
Pourkamali, S. ; Ayazi, F.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper reports on the fabrication and characterization of single-crystal silicon (SCS) capacitive resonators with operating frequencies in the HF (3-30 MHz) and VHF (30-300 MHz) range. In-plane ultra-stiff SCS resonators with polysilicon electrodes and self-aligned 90 nm vertical capacitive gaps have been fabricated on SOI substrates using a HARPSS-like fabrication process. High frequency side-supported flexural disk resonators and clamped-clamped beam resonators have been implemented and tested. A 3 /spl mu/m thick, 30/spl mu/m in diameter SCS disk resonator exhibited a quality factor of 40,000 in vacuum at 148 MHz. When operated in atmosphere, the same device demonstrated a Q of 8,000.
Keywords :
Q-factor; VHF devices; capacitors; elemental semiconductors; micromechanical resonators; nanostructured materials; silicon; silicon-on-insulator; substrates; 100 nm; 3 micron; 3 to 30 MHz; 30 micron; 30 to 300 MHz; SOI substrates; SOI-based HF single-crystal silicon resonators; SOI-based VHF single-crystal silicon resonators; Si; clamped-clamped beam resonators; high frequency flexural disk resonators; polysilicon electrodes; quality factor; ultrastiff single-crystal silicon capacitive resonators; vertical capacitive gaps; Crystalline materials; Electrodes; Fabrication; Immune system; Micromechanical devices; Q factor; Radio frequency; Resonant frequency; Sensor arrays; Silicon;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215604
