Title :
Characterization of non irradiated and heavily irradiated CVD diamond dosimeters
Author :
Bruzzi, M. ; Bucciolini, M. ; Menichelli, D. ; Pini, S. ; Molnar, J. ; Fenyvesi, A.
Author_Institution :
INFM, Florence, Italy
Abstract :
A Chemical Vapor Deposited (CVD) diamond film has been characterized as on-line dosimeter under irradiation with a 60Co gamma source in the dose range 0.1-1.0 Gy. The current response is strongly influenced by trapping-detrapping effects due to the presence of defects in the polycrystalline bulk. To obtain a stable and reproducible signal the defect distribution has been opportunely changed by irradiating the sample with fast neutrons (1 MeV) up to a fluence of 5×1014 n/cm2. The neutron irradiated sample show a linear response of the released charge as a function of the dose and of the current as a function of the dose-rate, with a sensitivity comparable with that of standard silicon dosimeters.
Keywords :
CVD coatings; crystal defects; diamond; dosimeters; gamma-ray detection; semiconductor counters; 0.1 to 1.0 Gy; C; defect distribution; heavily irradiated CVD diamond dosimeters; nonirradiated CVD diamond dosimeters; on-line dosimeter; trapping-detrapping effects; Chemical vapor deposition; Costs; Dosimetry; Energy states; Helium; In vivo; Neutrons; Silicon; Size measurement; Testing;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
Print_ISBN :
0-7803-7324-3
DOI :
10.1109/NSSMIC.2001.1008432
