DocumentCode
170102
Title
Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS
Author
Asenov, Asen
Author_Institution
Gold Stand. Simulations, Ltd., Univ. of Glasgow, Glasgow, UK
fYear
2014
fDate
26-30 May 2014
Firstpage
1
Lastpage
1
Abstract
Summary form only given. This paper describes the fully automated GSS tool flow, which bridges the gap between Technology Computer Aided Design (TCAD) at the transistor level, and circuit simulations and verification. The purpose of the tool flow is twofold: (i) to allow rapid simulation-based Design-Technology Co-Optimisation (DTCO) and (ii) to allow generation of accurate compact models for Preliminary Design Kit (PDK) development at the early stages of new technology development. The aim is to capture accurately process, statistical and time dependent variability in the DTCO and early PDKs. The operation of the automated tool flow is exemplified in the comprehensive PDK compact model development for a 14 nm SOI FinFET process, and the corresponding transistor / SRAM cell co-optimisation.
Keywords
CMOS memory circuits; MOSFET; SRAM chips; circuit simulation; elemental semiconductors; integrated circuit design; optimisation; silicon; silicon-on-insulator; statistical analysis; technology CAD (electronics); DTCO; PDK; SOI FinFET process; SRAM cell cooptimisation; Si; TCAD; advanced CMOS; automated GSS tool flow; circuit simulation; preliminary design kit; rapid simulation-based design-technology cooptimisation; size 14 nm; statistical process; technology computer aided design; time dependent variability; transistor level; Computational modeling; Control systems; Integrated circuit modeling; Monitoring; Optimization; Process control; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium (ETS), 2014 19th IEEE European
Conference_Location
Paderborn
Type
conf
DOI
10.1109/ETS.2014.6847791
Filename
6847791
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