DocumentCode :
1701267
Title :
Development of thick intrinsic silicon detectors for hard X-ray and gamma-ray detection
Author :
Phlips, B.F. ; Johnson, W.N. ; Kroeger, R.A. ; Kurfess, J.D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
1
fYear :
2001
Firstpage :
207
Abstract :
We are developing thick intrinsic silicon detectors for hard X-ray and gamma-ray detection. The goal is to manufacture detectors with good spectroscopy and imaging capabilities without the need for cryogenics. Our current baseline design is a double-sided silicon strip detector with an active area of ∼60 mm ×60 mm and a thickness of 2 mm. To demonstrate the feasibility of 2 mm thick intrinsic detectors, we tested a 2 mm thick single pixel detector. An energy resolution of 1 keV FWHM at 60 keV was achieved at an operating temperature of -65C. The detector was fully depleted at ∼800 V. We present the detailed results of tests on the pixel detector, the design of our double sided detector, and the conceptual design of hard X-ray and gamma ray instruments that use these detectors.
Keywords :
X-ray detection; gamma-ray detection; silicon radiation detectors; 2 mm; 208 K; 60 keV; 800 V; double-sided Si strip detector; energy resolution; gamma-ray detection; hard X-ray detection; pixel detector; thick Si detectors; Gamma ray detection; Gamma ray detectors; Manufacturing; Optical imaging; Silicon; Spectroscopy; Testing; X-ray detection; X-ray detectors; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-7324-3
Type :
conf
DOI :
10.1109/NSSMIC.2001.1008442
Filename :
1008442
Link To Document :
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