Title :
A 29 dBm CMOS class-E power amplifier with 63% PAE using negative capacitance
Author :
Song, Yonghoon ; Lee, Sungho ; Lee, Jaejun ; Nam, Sangwook
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
This paper proposes class-E power amplifier including negative capacitance to optimize shunt drain capacitance. The negative capacitance improves efficiency, compensates for surplus shunt drain capacitance resulting from parasitic capacitance, and is implemented without an external circuit. A cascode single-ended class-E RF power amplifier including driver stage is fabricated using a 0.13-mum standard CMOS technology delivering 29 dBm with 66% drain efficiency and 63% power-added efficiency at 1.8 GHz.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; driver circuits; radiofrequency amplifiers; CMOS class-E power amplifier; cascode single-ended RF power amplifier; efficiency 63 percent; efficiency 66 percent; frequency 1.8 GHz; negative capacitance; shunt drain capacitance; size 0.13 mum; Capacitance; Circuit testing; Delay; Frequency measurement; Inverters; MOS devices; Power amplifiers; Ring oscillators; Spatial resolution; Tiles;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280807
