DocumentCode
1701360
Title
InP/InGaAs heterojunction phototransistors for optoelectronic receivers
Author
Houston, Peter A. ; Helme, John ; Ng, Wai Keng ; Tan, Chee Hing
Author_Institution
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fYear
2004
Abstract
A theoretical and experimental analysis of the performance of InP/InGaAs heterostructure phototransistors (HPT) has been carried out and comparisons made with avalanche photodiodes (APDs) and PIN-HBT photodetectors. Although the APDs are intrinsically faster, the HPT in travelling-wave form has demonstrated excellent responsivity and power handling capability.
Keywords
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; optoelectronic devices; p-i-n diodes; photoresistors; receivers; InP-InGaAs; PIN-HBT photodetector; avalanche photodiodes; heterojunction phototransistor; optoelectronic receivers; power handling capability; responsivity; travelling-wave form; Analytical models; Avalanche photodiodes; Capacitance; Delay; Equations; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical receivers; Phototransistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN
0-7803-8658-2
Type
conf
DOI
10.1109/SMELEC.2004.1620821
Filename
1620821
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