Title :
Effect of germanium cap layer on indium ohmic contacts for n-type GaAs
Author :
Kok, Yit-Ping ; Abdul Aziz, Azlan
Author_Institution :
Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia
Abstract :
Ohmic contacts from Ge/In were successfully fabricated. Thin film of In and Ge were sequentially deposited onto a clean n-type GaAs surface as contact and followed by annealing at various temperatures up to 800 C in nitrogen ambient. Ge acted as a capping layer and promoted formation of InAs. Linear TLM and contact end resistance measurement were employed to characterize the specific contact resistance, ρc. Lowest ρc obtained with Ge/In contact was 3.38 10-3 Ωcm2. Due to unintentional oxidation reduction in specific contact resistance by Ge was not observed.
Keywords :
III-V semiconductors; annealing; contact resistance; gallium arsenide; germanium; indium; interface phenomena; ohmic contacts; thin films; GaAs-Ge-In; annealing process; contact end resistance measurement; germanium cap layer; indium ohmic contacts; linear TLM measurement; oxidation reduction; specific contact resistance; Annealing; Contact resistance; Gallium arsenide; Germanium; Indium; Ohmic contacts; Sputtering; Surface cleaning; Surface resistance; Temperature;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620827
