Title :
New small-signal equivalent circuit model for MESFET
Author :
Ma, J.-G. ; Lee, T.H. ; Yeo, K.S. ; Do, M.A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
6/21/1905 12:00:00 AM
Abstract :
An alternative small signal equivalent circuit for MESFETs is proposed. An inductor is derived theoretically from the basic semiconductor equation. Instead of pure output conductance gds in conventional equivalent circuit models, output admittance Yds=Gds+jB is introduced. The delay time τ in the conventional models can be interpreted physically. Using the model, simulated S-parameters agree well with the measured ones in the frequency range from 1 GHz to 26 GHz
Keywords :
S-parameters; Schottky gate field effect transistors; equivalent circuits; microwave field effect transistors; semiconductor device models; 1 to 26 GHz; MESFET; S-parameters; inductive effects; output admittance; semiconductor equation; small-signal equivalent circuit model; Admittance; Circuit simulation; Circuit topology; Equations; Equivalent circuits; Inductors; Integrated circuit modeling; MESFET circuits; Physics; Scattering parameters;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.828050
