Title :
Simulation of small Si and GaAs devices
Author :
Elschner, H. ; Klix, W. ; Passlack, M. ; Spallek, R.G. ; Stenzel, R.
Author_Institution :
Technische Universitat Dresden
Abstract :
There are some general aspects of device simulation discussed. Subsequently, 2D- and 3D-device simulators ZANAL, SEMICO and SIMBA, resprctively, as well as selected results for Si-, GaAs- and AlGaAs structures will be presented, with an approximate consideration of overshoot effect for GaAs-structures.
Keywords :
Analytical models; Circuit simulation; Computational modeling; Computer simulation; Coupling circuits; Electrons; Gallium arsenide; Maxwell equations; Process design;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721122
