DocumentCode
1701809
Title
Simulation of small Si and GaAs devices
Author
Elschner, H. ; Klix, W. ; Passlack, M. ; Spallek, R.G. ; Stenzel, R.
Author_Institution
Technische Universitat Dresden
fYear
1987
Firstpage
19
Lastpage
30
Abstract
There are some general aspects of device simulation discussed. Subsequently, 2D- and 3D-device simulators ZANAL, SEMICO and SIMBA, resprctively, as well as selected results for Si-, GaAs- and AlGaAs structures will be presented, with an approximate consideration of overshoot effect for GaAs-structures.
Keywords
Analytical models; Circuit simulation; Computational modeling; Computer simulation; Coupling circuits; Electrons; Gallium arsenide; Maxwell equations; Process design;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location
Dublin, Ireland
Print_ISBN
0-906783-72-0
Type
conf
DOI
10.1109/NASCOD.1987.721122
Filename
721122
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