Hydrogen sensitive Pt Schottky diode sensor based on GaN

Author

Hudeish, A.Y. ; Abdul Aziz, A. ; Hassan, Z. ; Ibrahim, K.

Author_Institution

Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia

fYear

2004

Abstract

Pt/GaN devices operated as Schottky diodes were characterized for their hydrogen gas sensitivity. The sensors are tested at different concentrations of hydrogen gas as a function of operating temperature. The Pt thin film (100nm) was prepared and deposited by sputtering method. The electrical characterization was made using (I-V) current voltage of the temperatures range of 25 C to 500 C. Result shows the current output increased as operating temperature increases and decreased as temperature exceed 200 C. The maximum sensor sensitivity recorded in terms of current detected showed higher value than those obtained form Pt/Si and Pt/SiC sensor diode at similar temperature. Sensitivity also increases as the concentration of H₂ gas increased. Further more, the sensor shows remarkable sensitivity stability and retained it at broad temperature range of 25 C up to 200 C.

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; gas sensors; platinum; semiconductor device testing; sensitivity; sputtered coatings; wide band gap semiconductors; 100 nm; 25 to 500 C; Pt-GaN; Schottky diode sensor; current-voltage characterization; electrical characterization; hydrogen gas sensitivity; sensor sensitivity; sputtering method; Gallium nitride; Gas detectors; Hydrogen; Schottky diodes; Sensor phenomena and characterization; Sputtering; Temperature distribution; Temperature sensors; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on

Print_ISBN

0-7803-8658-2

Type

conf

DOI

10.1109/SMELEC.2004.1620836

Filename

1620836