Direct statistical modelling in insulators

With decreasing the element sizes there appear the conditions when the electron free path λ can be compared with the size L. In this case the applicability of different hydrodynamic models is violated and the problem on the modelling of electrophysical characteristics of a device must be solved on the kinetic level. When the sizes of elements are small, more high demands of the homogeneity of the substrate and insulator materials as well as of the interface conditions are made. In particular, in the neighbourhood of the interface there can arise the states on which the carriers are scattered or trapped. If many of the above questions are well studied for semiconductors, then only a few investigations dealing with insulators are performed. The oxide silicon (Si0₂) and the nitride-silicon (Si₃N₄) are the most widely adopted insulators in microelectronics. The results of stuciies on the charge transport in Si0₂ and Si₃N₄ by means of the direct statistical modelling will be presented.