Title :
Two-Dimensional Numerical Substrate Current Modeling For N-channel MOS Transistors
Author :
Meinerzhagen, B.
Author_Institution :
AT&T Bell Laboratories
Abstract :
This paper describes a 2D numerical simulation technique for impact ionization. Impact ionization is modeled by a ballistic form of Chynoweth´s formula [27] with an electron transport model including energy transport. Substrate currents resulting from impact ionization measured on devices in a 0.75 /spl mu/m CMOS technology, are compared with simulated results employing this model. The model shows good agreement with these measurements over a wide range of channel lengths and bias conditions.
Keywords :
CMOS technology; Current measurement; Electrons; Impact ionization; Length measurement; MOSFETs; Numerical models; Poisson equations; Semiconductor device modeling; Temperature;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721124
