Title :
Two-dimensional Numerical Analysis Of Silicon Bipolar Magnetotransistors
Author :
Allegretto, W. ; Nathan, A. ; Baltes, H.P.
Author_Institution :
The University of Alberta
Abstract :
The numerical analysis of carrier transport in magnetic-field-sensitive integrated bipolar transistors is presented. The resulting distributions of potential and current density were obtained for a lateral CMOS NPN dual-collector magne totransistor, in the presence of a magnetic field perpendicular to the device surface.
Keywords :
Boundary conditions; CMOS technology; Electrostatics; Magnetic analysis; Magnetic fields; Neodymium; Nonlinear equations; Numerical analysis; Poisson equations; Silicon;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721127
