DocumentCode :
1701982
Title :
A study on Al bondpad grain boundaries and galvanic corrosion in wafer fabrication
Author :
Younan, Hua
Author_Institution :
Chartered Semicond. Mfg Ltd, Singapore, Singapore
fYear :
2004
Abstract :
Galvanic corrosion on microchip Al bondpads cause discoloration and nonstick bondpads at assembly processes. Thus it is very important to eliminate galvanic corrosion in wafer fab and assembly houses. In this paper, Al bondpad grain boundaries and galvanic corrosion is discussed. It was found that galvanic corrosion mostly occurred at bondpad grain boundary areas. TEM results confirmed that Al oxide was not uniform at grain boundaries on Al bondpads. Therefore, we think that it can help to prevent/eliminate galvanic corrosion to grow up an Al oxide or improve uniformity of Al oxide on bondpads.
Keywords :
assembling; corrosion; failure analysis; grain boundaries; integrated circuit testing; transmission electron microscopy; wafer bonding; assembly process; bondpad grain boundaries; discoloration problem; galvanic corrosion; microchip bondpads; nonstick bondpads; wafer fabrication; Aluminum; Assembly; Corrosion; Fabrication; Galvanizing; Grain boundaries; Metallization; Optical filters; Scanning electron microscopy; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
Type :
conf
DOI :
10.1109/SMELEC.2004.1620843
Filename :
1620843
Link To Document :
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