Simulation of subthreshold characteristics of SOI MOSFETs

This paper describes the application of two-dimensional device simulation to an investigation of the subthreshold characteristics of prototype batches of CMOS/SOI transistors fabricated using high energy oxygen implantation. A model is proposed which employs excess oxygen related donors distributed both spatially through the silicon film and in energy across the bandgap. Incorporation of this mdoel i n the two-dimensional simulator has permitted accurate prediction of both the threshold voltages and subthreshold slopes of p-channel and n-channel transistors.