Title :
The Splitting Scheme For The Drift-diffusion Model Of Semiconductors
Author :
Berezin, Yu A. ; Dmitrieva, O.E.
Author_Institution :
Institute of Theoretical and Applied Mechanics
Abstract :
There is proposed a splitting scheme of the nume rical integration of a system of partial differential equa tion describing a nonstationary drift-diffusion model of a semiconductor plasma, The typical initial-boundary value problem is described. The scheme accuracy is O(T, h/sup 2//sub 1/, h/sup 2//sub 2/).
Keywords :
Boundary conditions; Charge carrier processes; Current density; Dielectric materials; Electrodes; Electrostatics; Iron; Radiative recombination; Semiconductor devices; Semiconductor materials;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721173
