Title :
A CMOS dual-mode RF front-end receiver for GSM and WCDMA
Author :
Ko, Chun-Lin ; Kuo, Ming-Ching ; Hsu, Chun-Ming ; Kuo, Chien-Nan
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented. Because the system concepts of GSM and WCDMA are totally different from the standards, the chip uses low-IF and zero-IF receiver architecture for GSM and WCDMA, respectively. This chip consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end has been implemented in a standard 0.25μm CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3dB, 36dB for the GSM900, 5.9dB, 31dB for the DCS1800, and ?-dB, 17.2dB for the WCDMA, respectively.
Keywords :
3G mobile communication; CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; UHF oscillators; cellular radio; code division multiple access; radio receivers; voltage-controlled oscillators; 2.7 V; 30 mA; CMOS dual-mode receiver; DCS1800; GSM900; RF front-end receiver; WCDMA; analog transceivers; down-conversion mixers; highly integrated receiver; low-IF receiver; multi-band parallel architecture; parallel LNA; standard CMOS process; zero-IF receiver; CMOS process; GSM; Gain measurement; Multiaccess communication; Noise figure; Noise measurement; Power supplies; Radio frequency; Semiconductor device measurement; Voltage;
Conference_Titel :
Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-8637-X
DOI :
10.1109/APASIC.2004.1349501
