DocumentCode
1702230
Title
A self-consistent model for simulating the spectral response of quantum well photodetector
Author
Aboul-Seoud, A. Khairy ; Soliman, Moataz M. ; Hafez, Alaa S.
Author_Institution
Fac. of Eng., Alexandria Univ., Egypt
fYear
2004
Abstract
This work is devoted to simulate the spectral response of multiple AlxGa1-xAs/GaAs quantum well photodetector, using a self-consistent model. The model is based on the solution of semiconductor transport equations in the bulk regions and the solution of Schrodinger equation to model the quantum well regions. The model includes the capture, escape, and recombination of photoexcited carriers in the quantum wells. The results show that the model can simulate the spectral response of the multiple quantum wells structure. This has been confirmed by comparing these results with experimental results. This model is used to predict the spectral response of the device and to optimize the structure parameters to achieve maximum spectral response.
Keywords
Boltzmann equation; III-V semiconductors; Schrodinger equation; aluminium compounds; gallium arsenide; photodetectors; semiconductor device models; semiconductor quantum wells; AlGaAs-GaAs; Schrodinger equation; multiple quantum wells structure; photoexcited carriers; quantum well photodetector; self-consistent model; semiconductor transport equations; spectral response; Absorption; Charge carrier processes; Energy states; Gallium arsenide; Photodetectors; Photonic band gap; Poisson equations; Predictive models; Radiative recombination; Schrodinger equation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN
0-7803-8658-2
Type
conf
DOI
10.1109/SMELEC.2004.1620851
Filename
1620851
Link To Document