Pushing the speed limits of SiGe:C HBTs up to 0.5 Terahertz

The European project DOTFIVE is a 3-year project targeting a 0.5 THz SiGe Heterojunction Bipolar Transistor for the future development of communication, imaging and radar applications. The project proceeds along two paths. It explores further evolutionary scaling of self-aligned selective epitaxial base HBTs, and advanced process modules and disruptive novel device architectures. In this paper, the scaling perspectives and limitations of conventional device architectures will be reviewed. The advanced process modules and novel device architectures will be proposed.