Title :
Pushing the speed limits of SiGe:C HBTs up to 0.5 Terahertz
Author :
Decoutere, S. ; Van Huylenbroeck, S. ; Heinemann, B. ; Fox, A. ; Chevalier, P. ; Chantre, A. ; Meister, T. ; Aufinger, K. ; Schroter, Michael
Author_Institution :
IMEC Leuven, Leuven, Belgium
Abstract :
The European project DOTFIVE is a 3-year project targeting a 0.5 THz SiGe Heterojunction Bipolar Transistor for the future development of communication, imaging and radar applications. The project proceeds along two paths. It explores further evolutionary scaling of self-aligned selective epitaxial base HBTs, and advanced process modules and disruptive novel device architectures. In this paper, the scaling perspectives and limitations of conventional device architectures will be reviewed. The advanced process modules and novel device architectures will be proposed.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; radar; submillimetre wave transistors; 3-year project; European project DOTFIVE; SiGe:C; advanced process modules; evolutionary scaling; heterojunction bipolar transistor; radar; Germanium silicon alloys; Heterojunction bipolar transistors; Optical imaging; Radar applications; Silicon germanium;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280837
