Small-signal analysis of semiconductor devices containing generation-recombination centers

We propose a small-signal model of the semiconductor equations accounting for time-dependent carrier storage within generation-recombination centers. Such an effect is expected to be essential for the correct prediction of capacitance-frequency curves in devices containing a large amount of deep traps, such as stressed MOSFET´s and polycrystalline-silicon thin-film transistors. The model has been implemented in HFIELDS and shown to provide results in qualitative good agreement with experimental data available from the literature.