DocumentCode
1702370
Title
High voltage devices in advanced CMOS technologies
Author
Bianchi, R.A. ; Raynaud, C. ; Blanchet, F. ; Monsieur, F. ; Noblanc, O.
Author_Institution
STMicroelectronics, Crolles, France
fYear
2009
Firstpage
363
Lastpage
370
Abstract
CMOS technologies for mobile systems require integrated high voltage devices to address analog baseband and RF power applications. Technology and device architecture evolution, from 0.5 mum BCD-like to advanced 45 nm CMOS, on bulk and thin SOI substrates, are reviewed in this paper. Main challenges encountered when integrating these devices in advanced CMOS are explained. The influence of the gate oxide thickness on the relevant figures of merit and some considerations on performance-reliability trade-off are provided.
Keywords
CMOS analogue integrated circuits; MOSFET; integrated circuit reliability; power integrated circuits; silicon-on-insulator; CMOS technologies; SOI; analog baseband circuits; gate oxide thickness; high voltage MOSFET; integrated high voltage devices; reliability; Baseband; CMOS technology; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-4071-9
Electronic_ISBN
978-1-4244-4073-3
Type
conf
DOI
10.1109/CICC.2009.5280839
Filename
5280839
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